1 ? fn4560.7 hs-117rh radiation hardened adjustable positive voltage regulator the radiation hardened hs-117rh is an adjustable positive voltage linear regulator capable of operating with input voltages up to 40vdc. th e output voltage is adjustable from 1.2v to 37v with two external resistors. the device is capable of sourcing from 5ma to 1.25a peak (0.5 a peak for the to-39 package). protection is provided by the on-chip thermal shutdown and output current limiting circuitry. the intersil hs-117rh has advantages over other industry standard types, in that circuitry is incorporated to minimize the effects of radiation and te mperature on device stability. constructed with the intersil di electrically isolated rad hard silicon gate (rsg) process, the hs-117rh is immune to single event latch-up and has been specifically designed to provide highly reliable performance in harsh radiation environments. specifications for rad hard qm l devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical specifications for the hs-117rh are contained in smd 5962-99547. a ?hot-link? is provided on our website for downloading. pinouts hs2-117rh (to-39 can) bottom view hs9s-117rh (to-257aa flange mount) top view features ? electrically screened to dssc smd # 5962-99547 ? qml qualified per mil-prf-38535 requirements ? radiation environment - 300 krad (si) (max) - latch-up immune ? superior temperature stability ? overcurrent and over temperature protection applications ? adjustable linear voltage regulators ? adjustable linear current regulators hsye-117rh (smd.5 clcc) bottom view note: no current jedec outline for the smd.5 package. refer to smd for package dimensions. the to -257 is a totally isolated metal package. 2 1 3 out adjust in adjust out in 3 2 1 ordering information ordering number internal mkt. number temp. range ( o c) 5962f9954701vuc hs2-117rh-q -55 to 125 5962f9954701quc hs2-117rh-8 -55 to 125 5962f9954701vxc hs9s-117rh-q -55 to 125 5962f9954701qxc hs9s-117rh-8 -55 to 125 5962f9954701vyc hsye-117rh-q -55 to 125 5962f9954701qyc hsye-117rh-8 -55 to 125 hs2-117rh/proto hs2-117rh/proto -55 to 125 hs9s-117rh/proto hs9s-117rh/proto -55 to 125 hsye-117rh/proto hsye-117rh/proto -55 to 125 1 - adjust 2 - in 3 - out 1 2 3 data sheet october 2003 caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a registered trademark of intersil americas inc. copyright ? intersil americas inc. 2003. all rights reserved. all other trademarks mentioned are the property of their respective owners.
2 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality ce rtifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that da ta sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com die characteristics die dimensions 2616 m x 2794 m (103 mils x 110 mils) 483 m 25.4 m (19 mils 1 mil) interface materials glassivation type: silox (sio 2 ) thickness: 8.0k ? 1.0k ? top metallization type: alsicu thickness: 16.0k ? 2k ? substrate radiation hardened silicon gate, dielectric isolation backside finish gold assembly related information substrate potential unbiased (di) additional information worst case current density <2.0 x 10 5 a/cm 2 transistor count 95 metallization mask layout hs-117rh v out v out v in v in adj v outk hs-117rh
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